a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 s p ecifications are sub j ect to chan g e without notice. characteristics t c = 25 o c symbol test conditions minimum typical maximum units bv cbo i c = 50 ma 36 v bv ces i c = 100 ma 36 v bv ceo i c = 100 ma 18 v bv ebo i e = 10 ma 4.0 v i ces v ce = 15 v 15 ma h fe v ce = 5.0 v i c = 5.0 a 20 200 --- c ob v cb = 12.5 v f = 1.0 mhz 350 pf g pe imd 3 c v cc = 12.5 v i cq = 100 ma p out = 75 w ( pep ) f = 30.000 & 30.001 mhz 13 -30 14 55 db dbc % npn silicon rf power transistor hf75-12 description: the hf75-12 is designed for 12.5 volt class ab & c hf power amplifier applications in the 2 to 32 mhz band. features include: ? replacement for mrf454 & sd1405 ? p g = 13 db min. @ 30mhz & 75w ? withstands 20:1 load vswr maximum ratings i c 20 a v cb 36 v v ce 18 v v eb 4.0 v p diss 270 w @ t c = 25 o c t j -65 o c to +200 o c t stg -65 o c to +150 o c jc 0.65 o c/w package style .500" 4l flange 1 = collector 2 = base 3 & 4 = emitter
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